Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMT69M5LFVWQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. 

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT69M5LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 14.8
|IDS| @TC = +25°C (A) 40.6
PD @TA = +25°C (W) 2.74
PD @TC = +25°C (W) 20.5
RDS(ON)Max@ VGS(10V)(mΩ) 8.3 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 12.5 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 15.4 nC
QG Typ @ |VGS| = 10V (nC) 28.4 nC
CISS Typ (pF) 1406 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC