Diodes Incorporated
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DMT69M5LFVWQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. 

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT69M5LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 14.8
|IDS| @TC = +25°C (A) 40.6
PD @TA = +25°C (W) 2.74
PD @TC = +25°C (W) 20.5
RDS(ON)Max@ VGS(10V)(mΩ) 8.3 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 12.5 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 15.4 nC
QG Typ @ |VGS| = 10V (nC) 28.4 nC
CISS Typ (pF) 1406 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC