Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
PowerDI5060-8.png80V N-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switches.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 80 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 83 |
| PD @TA = +25°C (W) | 2.8 |
| PD @TC = +25°C (W) | 83 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 7.8 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 11 mΩ |
| |VGS(TH)| Max (V) | 2.8 V |
| QG Typ @ |VGS| = 4.5V (nC) | 21.7 nC |
| QG Typ @ |VGS| = 10V (nC) | 41.2 nC |
| CISS Typ (pF) | 2345 pF |
| CISS Condition @|VDS| (V) | 40 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2439 | 2019-12-05 | 2020-03-05 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products |
