80V N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switches.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive Supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 80 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 83 |
| PD @TA = +25°C (W) | 2.8 |
| PD @TC = +25°C (W) | 83 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 7.8 mΩ |
| |VGS(TH)| Min (V) | 2 V |
| |VGS(TH)| Max (V) | 4 V |
| QG Typ @ |VGS| = 10V (nC) | 34 nC |
| CISS Typ (pF) | 1950 pF |
| CISS Condition @|VDS| (V) | 40 V |
