Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

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DMT8012LPS

80V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • ​​​​Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Synchronous Rectifier
  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive Supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 9
|IDS| @TC = +25°C (A) 65
PD @TA = +25°C (W) 2.1
PD @TC = +25°C (W) 113
RDS(ON)Max@ VGS(10V)(mΩ) 17 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 21 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 15 nC
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 1949 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity