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DMTH10H009LFGQ

100V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Synchronous rectifiers, backlighting, power management functions, DC-DC converters.

Feature(s)

Low R_DS(ON)– Ensures On-State Losses are Minimized
Excellent Q_gd x R_DS(ON)Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH10H009LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous rectifiers
Backlighting
Power management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	12
\|I_DS\| @T_C = +25°C (A)	46
P_D @T_A = +25°C (W)	2.5
P_D @T_C = +25°C (W)	39
R_DS(ON)Max@ V_GS(10V)(mΩ)	8.5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	13.6 mΩ
\|V_GS(TH)\| Min (V)	1.1 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	41 nC
C_ISS Typ (pF)	2361 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H009LFGQ.spice.txt

Recommended Soldering Techniques

TN1.pdf