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DMTH10H009LPS

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
< 1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH10H009LPSQ)

Application(s)

Motor controls
DC-DC converters
Power management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	14
\|I_DS\| @T_C = +25°C (A)	100
P_D @T_A = +25°C (W)	3.5
P_D @T_C = +25°C (W)	125
R_DS(ON)Max@ V_GS(10V)(mΩ)	8 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	12.5 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.2 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	40.2 nC
C_ISS Typ (pF)	2309 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H009LPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2439	2019-12-05	2020-03-05	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products