DMTH10H010LPSW

100V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
DC-DC converters
Power managements

Specifications & Technical Documents

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	15
\|I_DS\| @T_C = +25°C (A)	98.4
P_D @T_A = +25°C (W)	3
P_D @T_C = +25°C (W)	125
R_DS(ON)Max@ V_GS(10V)(mΩ)	8.6 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	20 mΩ
\|V_GS(TH)\| Min (V)	1.4 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	53.7 nC
C_ISS Typ (pF)	2592 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H010LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf