Diodes Incorporated — Analog and discrete power solutions
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DMTH10H010SCT

100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • High BVDSS Rating for Power Application
  • Low Input/Output Leakage

Application(s)

  • Motor Control 
  • Backlighting 
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 2.5
PD @TC = +25°C (W) 187
RDS(ON)Max@ VGS(10V)(mΩ) 9.5 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 56.4 nC
CISS Typ (pF) 4468 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.