DMTH10H010SPSW

100V 175°C N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes On-State Losses
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMTH10H010SPSWQ)

Application(s)

Motor controls
DC-DC converters
Power managements

Specifications & Technical Documents

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	15
\|I_DS\| @T_C = +25°C (A)	100
P_D @T_A = +25°C (W)	3
P_D @T_C = +25°C (W)	166
R_DS(ON)Max@ V_GS(10V)(mΩ)	8.8 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	11.5 (@ 6V) mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	56.4 nC
C_ISS Typ (pF)	4468 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H010SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf