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DMTH10H017LPD

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH10H017LPDQ)

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	59
P_D @T_A = +25°C (W)	2.6
P_D @T_C = +25°C (W)	93
R_DS(ON)Max@ V_GS(10V)(mΩ)	17.4 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	30.3 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	28.6 nC
C_ISS Typ (pF)	1986 pF
C_ISS Condition @\|V_DS\| (V)	50 V

SPICE Model

DMTH10H017LPD.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile