Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png

Back to MOSFET Master Table

DMTH10H032LPSW

100V +175°C Dual N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON))yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production —

Ensures More Reliable and Robust End Application

High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous rectifiers
Backlighting
Power management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	33
P_D @T_A = +25°C (W)	3.4
P_D @T_C = +25°C (W)	68
R_DS(ON)Max@ V_GS(10V)(mΩ)	32 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	50 mΩ
\|V_GS(TH)\| Min (V)	1.3 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	6.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	11.9 nC
C_ISS Typ (pF)	683 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H032LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf