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DMTH10H038SPDW

100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Additional Tin-Plated on Sidewall Pads for Optical Solder
Inspection
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,
and manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	25
P_D @T_A = +25°C (W)	2.7
P_D @T_C = +25°C (W)	39
R_DS(ON)Max@ V_GS(10V)(mΩ)	33 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	8 nC
C_ISS Typ (pF)	544 pF
C_ISS Condition @\|V_DS\| (V)	50 V

SPICE Model

DMTH10H038SPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf