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DMTH12H007SK3

120V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production –Ensures More Reliable and Robust End Application
Low R_DS₍_ON₎ – Minimizes Power Losses
Low Q_g – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

Product Specifications

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	120 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	86
P_D @T_A = +25°C (W)	75
R_DS(ON)Max@ V_GS(10V)(mΩ)	8.9 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	44 nC
C_ISS Typ (pF)	3142 pF
C_ISS Condition @\|V_DS\| (V)	60 V

SPICE Model

DMTH12H007SK3.spice.txt

Recommended Soldering Techniques

TN1.pdf