Diodes Incorporated — Analog and discrete power solutions
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DMTH12H007SPSW

120V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Thermally Efficient Package – Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Application(s)

  • Switching
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 120 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 84
PD @TA = +25°C (W) 3.5
PD @TC = +25°C (W) 125
RDS(ON)Max@ VGS(10V)(mΩ) 8.9 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 44 nC
CISS Typ (pF) 3142 pF
CISS Condition @|VDS| (V) 60 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf