Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

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DMTH15H017SPS

150V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize (RDS(ON)), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production
  • Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency

 

Application(s)

  • Motor Control
  • DC-DC Converters
  • Power Management

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 150 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 11
|IDS| @TC = +25°C (A) 61
PD @TA = +25°C (W) 3.2
PD @TC = +25°C (W) 107
RDS(ON)Max@ VGS(10V)(mΩ) 19 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 2344 pF
CISS Condition @|VDS| (V) 75 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products