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DMTH15H053SPSWQ

150V +175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Thermally Efficient Package – Cooler Running Applications
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Qg – Minimizes Switching Losses
  • < 1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH15H053SPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power-management functions
  • DC-DC converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 150 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 25
PD @TA = +25°C (W) 4
PD @TC = +25°C (W) 107
RDS(ON)Max@ VGS(10V)(mΩ) 66 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 11.5 nC
CISS Typ (pF) 814 pF
CISS Condition @|VDS| (V) 75 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf