30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 16 ±V |
|IDS| @TC = +25°C (A) | 170 |
PD @TA = +25°C (W) | 3.2 |
PD @TC = +25°C (W) | 100 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2.2 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 3.2 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 34 nC |
QG Typ @ |VGS| = 10V (nC) | 68 nC |
CISS Typ (pF) | 3944 pF |
CISS Condition @|VDS| (V) | 25 V |