Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

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DMTH4001SPS (NRND)

NRND = Not Recommended for New Design

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 20
CISS Typ (pF) 10787
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 3.09
PD @TC = +25°C (W) 187.5
Polarity N
QG Typ @ |VGS| = 10V (nC) 144
QG Typ @ |VGS| = 4.5V (nC) 85
AEC Qualified No
RDS(ON)Max@ VGS(10V)(mΩ) 1
|VDS| (V) 40
|VGS| (±V) 20
|VGS(TH)| Max (V) 4

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2579 2022-08-29 2023-02-28 Device End of Life (EOL)