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DMTH4001STLW

40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8 (TOLL)

Datasheet

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Description

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
DC-DC converters
Power managements

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	300
P_D @T_A = +25°C (W)	6
P_D @T_C = +25°C (W)	300
R_DS(ON)Max@ V_GS(10V)(mΩ)	0.85 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	150 nC
C_ISS Typ (pF)	13185 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMTH4001STLW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile