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DMTH4004LPSW

40V 175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Thermally Efficient Package – Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH4007LPSWQ)

Application(s)

  • Notebook battery power managements
  • DC-DC converters
  • Load switches

Specifications & Technical Documents

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 26
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 2.6
PD @TC = +25°C (W) 138
RDS(ON)Max@ VGS(10V)(mΩ) 2.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 4 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 34.6 nC
QG Typ @ |VGS| = 10V (nC) 82.2 nC
CISS Typ (pF) 4508 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity