Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMTH4008LPDW

40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching, Test in Production– Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4008LPDWQ)

Application(s)

  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 10
|IDS| @TC = +25°C (A) 46.2
PD @TA = +25°C (W) 1.3
PD @TC = +25°C (W) 39.4
RDS(ON)Max@ VGS(10V)(mΩ) 12.3 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 17.5 mΩ
|VGS(TH)| Max (V) 2.3 V
QG Typ @ |VGS| = 4.5V (nC) 5.8 nC
QG Typ @ |VGS| = 10V (nC) 12.3 nC
CISS Typ (pF) 881 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf