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DMTH43M8SPDW

40V +175?C Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching, Test in Production – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power management functions
DC-DC converters

Product Specifications

Product Parameters

IDS @ TC = +25?C	105
PD @ TA = +25?C	3
PD @ TC = +25?C	76
AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
R_DS(ON)Max@ V_GS(10V)(mΩ)	4.5 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	17 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	40 nC
C_ISS Typ (pF)	2958 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMTH43M8SPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf