Diodes Incorporated — Analog and discrete power solutions

DMTH46M7SFVW

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance  (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
  • Environments
  • Excellent QGD ×RDS(ON) Product (FOM)
  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • 100% Unclamped Inductive Switching (UIS) Test in Production –
  • Ensures More Reliable and Robust End Application
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor controls
  • Power management functions
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No Y/N
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 16.3 A
|IDS| @TC = +25°C (A) 67.2 A
PD @TA = +25°C (W) 3.2 W
PD @TC = +25°C (W) 54.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 5.7 mΩ
|VGS(TH)| Max (V) 4 V
CISS Typ (pF) 1315 pF
CISS Condition @|VDS| (V) 20 V
QG Typ @ |VGS| = 10V (nC) 14.8

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf