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DMTH6009LPSWQ

60V +175°C N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. The device is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: high-frequency switching, synchronous rectifications, and DC-DC converters.

Feature(s)

  • Rated to +175°C—Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
  • Low RDS(ON)—Minimizes Power Losses
  • Low QG—Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH6009LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • High-frequency switching
  • Synchronous rectifications
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TC = +25°C (A) 89.5
PD @TA = +25°C (W) 2.8
PD @TC = +25°C (W) 136
RDS(ON)Max@ VGS(10V)(mΩ) 10 mΩ
|VGS(TH)| Min (V) 0.7 V
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 10V (nC) 33.5 nC
CISS Typ (pF) 1925 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf