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DMTH6010LPDW

60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6010LPDWQ)

Application(s)

Engine management systems
Body control electronics
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	13.1
\|I_DS\| @T_C = +25°C (A)	47.6
P_D @T_A = +25°C (W)	2.8
P_D @T_C = +25°C (W)	37.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	16 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	40.2 nC
C_ISS Typ (pF)	2615 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6010LPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf