Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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DMTH6010SK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.

Feature(s)

  • Low RDS(ON) – ensures on state losses are minimized
  • Excellent Qgd x RDS (ON) Product (FOM)
  • Advanced Technology for DC/DC converts
  • Small form factor thermally efficient package enables higher density end products

Application(s)

  • Power Mangagement Functions
  • DC-DC Converters 
  • Backlighting

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 16.3
|IDS| @TC = +25°C (A) 70
PD @TA = +25°C (W) 3.1
PD @TC = +25°C (W) 59
RDS(ON)Max@ VGS(10V)(mΩ) 8 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 38.1 nC
CISS Typ (pF) 2841 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity