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DMTH6010SPS

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)– Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	13.5
\|I_DS\| @T_C = +25°C (A)	100
P_D @T_A = +25°C (W)	2.6
P_D @T_C = +25°C (W)	167
R_DS(ON)Max@ V_GS(10V)(mΩ)	8 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	38.1 nC
C_ISS Typ (pF)	2841 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile