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DMTH6012LPSW

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Engine management systems
Body control electronics
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	11.5
\|I_DS\| @T_C = +25°C (A)	50.5
P_D @T_A = +25°C (W)	2.8
P_D @T_C = +25°C (W)	53.6
R_DS(ON)Max@ V_GS(10V)(mΩ)	14 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	21 mΩ
\|V_GS(TH)\| Max (V)	2.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	13.6 nC
C_ISS Typ (pF)	785 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH6012LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile