Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

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DMTH6015LDVWQ

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMTH6015LDVWQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Wireless Charging
  • DC-DC Converters
  • Power Management

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TA = +25°C (A) 9.2
|IDS| @TC = +25°C (A) 24.5
PD @TA = +25°C (W) 3
PD @TC = +25°C (W) 24.5
RDS(ON)Max@ VGS(10V)(mΩ) 20.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 27 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 7.1 nC
QG Typ @ |VGS| = 10V (nC) 14.3 nC
CISS Typ (pF) 825 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf