60V +175°C N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive Supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 37.1 |
| PD @TA = +25°C (W) | 3 |
| PD @TC = +25°C (W) | 37.5 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 16 mΩ |
| |VGS(TH)| Min (V) | 1 V |
| |VGS(TH)| Max (V) | 2.5 V |
| QG Typ @ |VGS| = 10V (nC) | 17 nC |
| CISS Typ (pF) | 864 pF |
| CISS Condition @|VDS| (V) | 30 V |
