Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI3333-8.png
Back to MOSFET Master Table

DMTH63M5LFGQ

60V +175°C N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and ideal for use in: synchronous rectification, motor controls, DC-DC converters, and power management.

Feature(s)

  • Rated to +175°C — Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
  • Low RDS(ON)—Ensures On-State Losses are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH63M5LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Synchronous rectification
  • Motor controls
  • DC-DC converters
  • Power management

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 90.3
PD @TA = +25°C (W) 3.4
PD @TC = +25°C (W) 63.3
RDS(ON)Max@ VGS(10V)(mΩ) 4 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 10V (nC) 41.2 nC
CISS Typ (pF) 2378 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf