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DMTH63M6LPSW

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON))yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)— Minimizes Power Losses
Low Q_g — Minimizes Switching Losses
Wettable Flank for Improved Optical Inspection
Fast Switching Speed
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH63M6LPSWQ)

Application(s)

High-frequency switching
Sync rectification
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	105
P_D @T_A = +25°C (W)	3.3
P_D @T_C = +25°C (W)	84.7
R_DS(ON)Max@ V_GS(10V)(mΩ)	4.1 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	6.2 mΩ
\|V_GS(TH)\| Min (V)	1.3 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	23 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	44.8 nC
C_ISS Typ (pF)	2479 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH63M6LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf