Diodes Incorporated — Analog and discrete power solutions
PowerDI1012 8

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POWERDI1012-8-TOLL-.jpg
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DMTH8001STLW

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8

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Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-state Losses
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH8001STLWQ)

Application(s)

  • Motor controls
  • DC-DC converters
  • Power management

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 270
PD @TA = +25°C (W) 6
PD @TC = +25°C (W) 250
RDS(ON)Max@ VGS(10V)(mΩ) 1.7 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 138 nC
CISS Typ (pF) 8894 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf