80V 175°C Dual N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, power managements.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 80 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 173 |
PD @TA = +25°C (W) | 5.6 |
PD @TC = +25°C (W) | 150 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2.5 mΩ |
|VGS(TH)| Min (V) | 2 V |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 10V (nC) | 124 nC |
CISS Typ (pF) | 8191 pF |
CISS Condition @|VDS| (V) | 40 V |