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DMTH8008SPS

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Feature(s)

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) — Minimizes On State Losses

Application(s)

DC-DC Converters
Load Switch

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	92
P_D @T_A = +25°C (W)	3.4
P_D @T_C = +25°C (W)	100
R_DS(ON)Max@ V_GS(10V)(mΩ)	7.8 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	11 (@6V) mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	23 (@6V) nC
Q_G Typ @ \|V_GS\| = 10V (nC)	34 nC
C_ISS Typ (pF)	1950 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

SPICE Model

DMTH8008SPS .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2439	2019-12-05	2020-03-05	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products