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DMTH8030LFDFWQ

80V 175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
6mm Profile — Ideal for Low Profile Applications
PCB Footprint of 4mm₂
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMTH8030LFDFWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Power-management functions
Battery operated systems and solid-state relays
Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	6.5
P_D @T_A = +25°C (W)	2.1
R_DS(ON)Max@ V_GS(10V)(mΩ)	25 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	38 mΩ
\|V_GS(TH)\| Min (V)	1.2 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	10.4 nC
C_ISS Typ (pF)	641 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMTH8030LFDFWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf