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DMTH8030LPDW

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8

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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH8030LPDWQ)

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	28.5
P_D @T_A = +25°C (W)	3.1
P_D @T_C = +25°C (W)	41
R_DS(ON)Max@ V_GS(10V)(mΩ)	26 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	45 mΩ
\|V_GS(TH)\| Min (V)	1.3 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	10.4 nC
C_ISS Typ (pF)	631 pF
C_ISS Condition @\|V_DS\| (V)	40 V

SPICE Model

DMTH8030LPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile