80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N+N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 80 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 28.5 |
PD @TA = +25°C (W) | 3.1 |
PD @TC = +25°C (W) | 41 |
RDS(ON)Max@ VGS(10V)(mΩ) | 26 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 45 mΩ |
|VGS(TH)| Min (V) | 1.3 V |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 5.4 nC |
QG Typ @ |VGS| = 10V (nC) | 10.4 nC |
CISS Typ (pF) | 631 pF |
CISS Condition @|VDS| (V) | 40 V |