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DMTH82M6SPSW

80V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMTH82M6SPSWQ)

Application(s)

Engine-management systems
Body control electronics
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	174
P_D @T_A = +25°C (W)	4.1
P_D @T_C = +25°C (W)	150
R_DS(ON)Max@ V_GS(10V)(mΩ)	2.6 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	87 nC
C_ISS Typ (pF)	5466 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

SPICE Model

DMTH82M6SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf