1200V N-Channel Silicon Carbide Power MOSFET
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This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive Supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 1200 V |
| |VGS| (±V) | 15, 4 ±V |
| |IDS| @TC = +25°C (A) | 85.5 |
| PD @TC = +25°C (W) | 312 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 28.5 (@ 15V) mΩ |
| |VGS(TH)| Min (V) | 1.8 V |
| |VGS(TH)| Max (V) | 3.6 V |
| QG Typ @ |VGS| = 10V (nC) | 184 (@ 15V) nC |
| CISS Typ (pF) | 3864 pF |
| CISS Condition @|VDS| (V) | 1000 V |
