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DMWSH120H90SCT7

1200V N-Channel Silicon Carbide Power MOSFET

Datasheet

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Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
High B_VDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMWSH120H90SCT7Q)

Application(s)

Switch mode power supplies
Motor drives
High voltage DC-DC converters
Solar inverters
EV battery chargers

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	1200 V
\|V_GS\| (±V)	15, 4 ±V
\|I_DS\| @T_C = +25°C (A)	38.2
P_D @T_C = +25°C (W)	197
R_DS(ON)Max@ V_GS(10V)(mΩ)	90 (@ 15V) mΩ
\|V_GS(TH)\| Min (V)	1.7 V
\|V_GS(TH)\| Max (V)	3.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	54.6 (@ 15V) nC
C_ISS Typ (pF)	1078 pF
C_ISS Condition @\|V_DS\| (V)	1000 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf