1200V N-Channel Silicon Carbide Power MOSFET
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This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 1200 V |
|VGS| (±V) | 15, 4 ±V |
|IDS| @TC = +25°C (A) | 41 |
PD @TC = +25°C (W) | 246 |
RDS(ON)Max@ VGS(10V)(mΩ) | 97.5 (@ 15V) mΩ |
|VGS(TH)| Min (V) | 1.7 V |
|VGS(TH)| Max (V) | 3.5 V |
QG Typ @ |VGS| = 10V (nC) | 50.9 (@ 15V) nC |
CISS Typ (pF) | 1090 pF |
CISS Condition @|VDS| (V) | 1000 V |