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DMWSH120H90SM4

1200V N-Channel Silicon Carbide Power MOSFET

Datasheet

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Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMWSH120H90SM4Q)

Application(s)

EV high-power DC-DC converters
EV charging systems
AC-DC traction inverters
Automotive motor drivers

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	1200 V
\|V_GS\| (±V)	15, 4 ±V
\|I_DS\| @T_C = +25°C (A)	40
P_D @T_C = +25°C (W)	235
R_DS(ON)Max@ V_GS(10V)(mΩ)	97.5 (@ 15V) mΩ
\|V_GS(TH)\| Min (V)	1.7 V
\|V_GS(TH)\| Max (V)	3.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	51.1 (@ 15V) nC
C_ISS Typ (pF)	1112 pF
C_ISS Condition @\|V_DS\| (V)	1000 V

Technical Documents

SPICE Model

DMWSH120H90SM4.spice.txt

Recommended Soldering Techniques

TN1.pdf