SURFACE MOUNT SCHOTTKY BARRIER DIODE
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This Schottky barrier device has been designed to meet the stringent requirements of automotive applications. The devices are ideally suited to use as: polarity protection diodes, re-circulating diodes, and switching diodes.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Single |
| Power Rating(mW) | 200 mW |
| Peak RepetitiveReverse VoltageVRRM (V) | 40 V |
| Forward Continuous Current IFM (mA) | 350 mA |
| Forward VoltageDrop VF(V) | 0.37 |
| @ IF(mA) | 20 mA |
| Maximum ReverseCurrent IR (µA) | 5 µA |
| @ VR (V) | 40 V |
| Capacitance CTOT Typ (pF) | 35 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2623 | 2023-05-15 | 2023-11-15 | Device End of Life (EOL) |
| PCN-2562 | 2022-01-04 | 2022-04-04 | Qualification of Additional Wafer Back Grinding and Back Metal Process Source (GFAB) for Select Discrete Products |
| PCN-2550 | 2021-12-20 | 2022-06-20 | Device End of Life (EOL) |
| PCN-2477 | 2020-08-17 | 2021-05-09 | Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi |
| PCN-2459 | 2020-05-28 | 2020-11-28 | Device End of Life (EOL) |
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
| PCN-2339 | 2018-06-15 | 2018-09-15 | Qualification of Additional Wafer Source for Select Products |
