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SDM2100S1FQ

2A SCHOTTKY BARRIER RECTIFIER

Datasheet

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Description

The SDM2100S1FQ is a single rectifier packaged in SOD123F. Offering low VF, low power loss and high efficiency, this device is ideal for use in general rectification applications.

Feature(s)

Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Interlocking Clip Design for High Surge Current Capacity
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The SDM2100S1FQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Boost Diode
Blocking Diode

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive supports PPAP)	Automotive
Configuration	Single
MaximumAverageRectifiedCurrent I_O(A)	2 A
@ TerminalTemperature TT (ºC)	N/A ºC
Peak RepetitiveReverse VoltageV_RRM(V)	100 V
Peak ForwardSurge CurrentI_FSM(A)	50 A
Forward VoltageDrop V_F(V)	0.83 V
@ I_F(A)	2 A
Maximum ReverseCurrent I_R(µA)	0.15 µA
@ V_R(V)	100 V
TotalCapacitance C_T(pF)	42 pF

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2590	2022-06-01	2022-09-01	Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound for Select Automotive Products
PCN-2500	2021-03-24	2021-06-24	Transfer Final Test and Packing from Eris Plant 1 in Taipei City, Taiwan to Eris Plant 2 in Taoyuan, Taiwan for Automotive Products
PCN-2478	2020-08-13	2021-06-06	Additional Wafer Source (GFAB)