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T12M35T600B(LS)

Triacs Silicon Bidirectional Thyristors

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Feature(s)

  • Blocking voltage to 600V
  • High immunity to dv/dt – 400V/us Minimum at +125°C
  • High Surge Current of 100 Amperes
  • Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified Yes
Configuration Bi-Directional
Type TRIAC
Peak Repetitive Off-State VoltageVDRM / RRM (V) 600 V
On-State RMS Current(RMS)IT(RMS) (A) 12 A
Peak On-State Voltage MaxVTM Max(V) 1.85 V
Gate Trigger Current MaxIGT MAX (mA) 35 mA
Peak Repetitive Forward Current MaxIDRM Max (uA) 10 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A) 100 A
Holding Current MaxIH Max (mA) 40 mA
Junction TemperatureTJ Max (°C) 125

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Technical Documents

Recommended Soldering Techniques

TN1.pdf