T4M10T600B(LS)

Triacs Silicon Bidirectional Thyristors

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Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
High Immunity to dv/dt - 50V/µs Minimum at +125°C
Minimum and Maximum Values of I_GT, V_GT and I_H Specified for Ease of Design on
On-State Current Rating of 4 Amperes RMS at +100°C
High Surge Current of 40 Amperes
Rugged, Economical TO-220AB Package
Operational in Three Quadrants: Q1, Q2, and Q3
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Compliance (Only Automotive supports PPAP)	Standard
AEC Qualified	Yes
Configuration	Bi-Directional
Type	TRIAC
Peak Repetitive Off-State VoltageVDRM / RRM (V)	600 V
On-State RMS Current(RMS)IT(RMS) (A)	4 A
Peak On-State Voltage MaxVTM Max(V)	1.6 V
Gate Trigger Current MaxIGT MAX (mA)	10 mA
Peak Repetitive Forward Current MaxIDRM Max (uA)	10 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A)	40 A
Holding Current MaxIH Max (mA)	15 mA
Junction TemperatureTJ Max (°C)	125

Recommended Soldering Techniques

TN1.pdf