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T4M35T600B(LS)

Triacs Silicon Bidirectional Thyristors

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Feature(s)

  • Blocking voltage to 600V
  • High immunity to dv/dt – 500V/us Minimum at +125°C
  • High Surge Current Capability - 40 Amperes
  • Operational in Three Quadrants: Q1, Q2, and Q3
  • On-State Current Rating of 4.0 Amperes RMS at +100°C
  • Minimizes Snubber Networks for Protection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified Yes
Configuration Bi-Directional
Type TRIAC
Peak Repetitive Off-State VoltageVDRM / RRM (V) 600 V
On-State RMS Current(RMS)IT(RMS) (A) 4 A
Peak On-State Voltage MaxVTM Max(V) 1.6 V
Gate Trigger Current MaxIGT MAX (mA) 35 mA
Peak Repetitive Forward Current MaxIDRM Max (uA) 10 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A) 40 A
Holding Current MaxIH Max (mA) 35 mA
Junction TemperatureTJ Max (°C) 125

Related Content

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Technical Documents

Recommended Soldering Techniques

TN1.pdf