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ZVN3310F

N Channel

Datasheet

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Description

This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications. Complementary Type – ZVP3310F

Application(s)

General purpose 100V FET

Power management

Disconnect switches

Telecoms

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.1
P_D @T_A = +25°C (W)	0.33
R_DS(ON)Max@ V_GS(10V)(mΩ)	10000 mΩ
\|V_GS(TH)\| Max (V)	2.4 V
C_ISS Typ (pF)	40 max @ 25V pF

Technical Documents

SPICE Model

ZVN3310F.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile