N-CHANNEL ENHANCEMENT MODE MOSFET
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This 250V enhancement mode N-channel MOSFET provides users with a competitive specification. It offers efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdowns. Applications benefiting from this device include a variety of telecom and general high-voltage circuits.
SOT89 and SOT223 versions are also available.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 250 V |
|VGS| (±V) | 40 ±V |
|IDS| @TA = +25°C (A) | 0.23 |
PD @TA = +25°C (W) | 1.1 |
RDS(ON)Max@ VGS(10V)(mΩ) | 8500 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 9000 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 9500 (@2.4V) mΩ |
|VGS(TH)| Max (V) | 1.8 V |
CISS Typ (pF) | 72 @ 25V pF |